| 摘要 |
<p>The invention is a method and apparatus for producing silicon ingots of substantially single crystallinity from metallurgical grade silicon by heating it in a crucible to above its melting point to melt it and then extracting heat from the bottom of the crucible with a heat exchanger in heat conducting relationship with the bottom, and by moving the crucible and growing crystal in a first direction and accelerating the motion, thereby detaching from the crystal/liquid interface adhered impurity particles. The crucible may be rotated and the acceleration may be rotational.</p> |
