| 摘要 |
PURPOSE:To reduce the boundary level density of a dielectric film by instantaneously emitting a light ray from the surface to the film accumulated on a semiconductor substrate by a chemical vapor deposition method (CVD). CONSTITUTION:A dielectric film 4 or the like such as an SiO2 film or an Si2N4 film or the like is accumulated by a chemical vapor deposition method or vacuum vapor deposition method or the like on upper or lower or both side surfaces of a semiconductor substrate 3 (or a semiconductor film). A light ray such as an ultraviolet ray or visible light ray or infrared ray or the like is emitted instantaneously within 10sec from the surface to the film 4. Accordingly, the boundary between the substrate 3 and the film 4 is instantaneously heated by this light annealing treatment, thereby reducing the boundary level density. |
