| 摘要 |
PURPOSE:To form a thin film on a substrate opposed to a target and arranged close to and in parallel with the second sheet plasma by allowing the accelerated ionized particles in the first sheet plasma to collide with the target surface, and sputtering the target. CONSTITUTION:The plasma generated by an arc discharge is formed into two parallel sheets of plasma 41a and 41b by magnetic field means 38a and 38b. The target 40 is approached to the high-density plasma 41a, the target 40 is negatively charged with respect to the sheet plasma 41a, hence innumerable ions can be taken out in the direction of the target 40, and high-speed sputtering can be realized. In addition, the sheet plasma 41b is used to enhance the reactivity of the sputtered ions and gaseous reactant in the vicinity of the substrate 39. As a result, a good-quality film is formed at a high rate even if the substrate is not heated. |
