发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To eliminate a need to mount a bypass capacitor and to reduce a production cost by a method wherein the bypass capacitor is built inside a semiconductor memory device. CONSTITUTION:A semiconductor memory device where a bypass capacitor 1 is inserted between a power-supply terminal 2 and a ground terminal 3 is sealed in a container 6 identical to that of a semiconductor chip 6. That is to say, the bypass capacitor 1 is connected to a suspension pin 4 connected to an island 5 (which is connected to the ground terminal 3) where the semiconductor chip 6 has been loaded and to an inner lead 21 (which is connected to the power supply terminal 2) adjacent to it; these are sealed in the container 7. Since the container is much larger as compared with the semiconductor chip, in many cases there is sufficient room to mount a small-sized capacitor.</p>
申请公布号 JPH0252464(A) 申请公布日期 1990.02.22
申请号 JP19880203640 申请日期 1988.08.15
申请人 NEC CORP 发明人 EGUCHI NOBUHIKO;NEGISHI YUJI
分类号 H01L25/00;H01L23/50;H01L27/10 主分类号 H01L25/00
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