Press-contact flat type semiconductor device.

摘要

A press-contact flat type semiconductor device is disclosed which, without alloy-bonding a silicon pellet (16) to a molybdenum or tungsten disc (118), assures a uniform press contact because a warp on the silicon pellet (16) is largely reduced in comparison with a conventional device. A silver sheet is omitted between an anode electrode post (2) and the silicon pellet (16) to absorb a warp on the pellet. It is only necessary to insert a molybdenum or tungsten disc (118) there, instead, which is thinner than a counterpart of the conventional device. Between the cathode electrode of the silicon pellet 16) and a cathode electrode post (1) use is made of, in the place of a conventional molybdenum foil and silver cap, an annealed soft copper cap (113) of better malleability and, in the place of conventional molybdenum disc, an inexpensive hard copper sheet (112) of adequate thickness and rigidity, not annealed, which can assure uniform press contact with the cathode electrode surface which oppositely confronts a gate lead connection cutout of a cathode electrode post. Since the silicon pellet (16) is not alloy-bonded to the molybdenum or tungsten disc (118), it is simple and easy to form a bevelled structure, and to perform a silicone insulating rubber coating operation, so as to obtain the anode-to-cathode withstand voltage of the silicon pellet (16). Thus an inexpensive press-contact flat type semiconductor device of a long life can be provided which ensures more uniform press contact than a conventional semiconductor device.