| 摘要 |
PURPOSE:To obtain a required resistance value by an annealing treatment at a low temperature in a short time and simplify and stabilize the manufacturing process by a method wherein BF2<+> ions are employed as ions to be implanted into polycrystalline silicon. CONSTITUTION:An emitter contact window 1, a base contact window 2, an emitter 3, an emitter electrode 4, a base electrode 5, a polycrystalline silicon resistor 6 and a base 7 are provided in a transistor with a built-in resistor. The resistor 6 is formed on an oxide film with polycrystalline silicon and BF2<+> ions are implanted into the polycrystalline silicon. By a thermal treatment at 900 deg.C for 10 minutes, the impurity is completely activated. |
