| 摘要 |
PURPOSE:To restrict the superposition of a metal film and an annular layer to a necessary minimum limit and to rationalize a manufacture by reducing the number of photoetching times by performing a step of diffusing the annular layer after a step of forming a pattern of the metal film, and diffusing the annular layer with the metal film as a mask. CONSTITUTION:The surface of a semiconductor 1 is wholly covered with an oxide film as an insulating film 10, and a window 10a is formed by first photoetching. The whole surface is covered with a high melting point metal such as tungsten or the like to form a Schottky junction with the semiconductor 1, and a metal film 11 is insularly formed on the surface of the semiconductor 1 in the window 10a by second photoetching. Boron ions B are implanted as a p-type impurity by an ion implanting method from the exposed annular semiconductor surface to the surface of the semiconductor, the implanted boron 12a is diffused in a thermally diffusing step to form an annular layer 12. Thus, the layer 12 is effectively conductively brought into contact with the peripheral edge of the film 11. The layer 12 is provided thereby to prevent an electric field from concentrating at the peripheral edge of the film 11, and a breakdown strength value is provided at the formed Schottky diode. |
