| 摘要 |
<p>A solid-state image sensor is disclosed which comprises a photodiode (64; 64') formed in a P-type substrate (62; 62'). A charge-coupled device (66; 66') is disposed adjacent the photodiode for receiving signal carriers from the photodiode (64; 64'). A lateral-overflow drain (75; 75') is disposed adjacent the photodiode for receiving excess carriers from the photodiode (64; 64'). In order to provide a simplified image sensor, a virtual gate (71; 71') is formed between the photodiode (64; 64') and the drain (75; 75') to effect the flow of the excess carriers from the photodiode (64; 64').</p> |
