| 摘要 |
PURPOSE:To prevent a soft error from being caused due to alpha rays by a method wherein an insulating film used to block a movement of an electron-hole pair generated by the alpha rays is formed between a memory cell and a substrate. CONSTITUTION:After grooves 2 have been formed lengthwise and breadthwise on the surface of a semiconductor substrate 1, electrodes 4 of capacitors for information storage use are formed at side parts of the grooves 2. Then, dielectric films 5 of said capacitors are formed on the surface of the substrate 1; polycrystalline silicon films 6 constituting common electrodes of the capacitors are filled into said grooves 2. Then, insulating films 7 are formed on said films 6; a polycrystalline silicon layer 8 and a thick insulating film 9 are formed on the surface of the semiconductor substrate 1. Then, a semiconductor substrate 10 which has been prepared separately and said substrate 1 are pasted together by using insulating films 9, 11; the rear of the substrate 1 is polished until the bottom of a semiconductor region 3 is exposed; a switching transistor is formed in this part. |
