发明名称 |
Electronic memory device utilizing silicon-on-sapphire transistors |
摘要 |
An electronic memory device is disclosed which utilizes silicon-on-sapphire (SOS) transistors that exhibit binary states dependent upon the dose of ionizing radiation to which they are subjected. A memory utilizing such SOS transistors may have information written into it, permenently or for a short period of time, by electron-beam bombardment so that the memory operates as a PROM. The memory may also operate as a RAM when a scanning electron beam, in conjunction with appropriately applied biases, is used to read and write information at a high rate.
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申请公布号 |
US4866669(A) |
申请公布日期 |
1989.09.12 |
申请号 |
US19880198802 |
申请日期 |
1988.05.05 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
SROUR, JOSEPH R.;OTHMER, SIEGFRIED |
分类号 |
G11C7/00;G11C17/12 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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