| 摘要 |
PURPOSE:To obtain a semiconductor thin film forming apparatus which enables a uniform semiconductor thin film to be formed on a substrate at a high film forming rate, by a structure wherein a high frequency applying electrode is formed in an irregular configuration in the film forming apparatus which forms a thin film utilizing glow discharge decomposition, and the width of the projecting section is varied in accordance with the position in the electrode. CONSTITUTION:In a film forming apparatus which forms a thin film utilizing glow discharge decomposition, a high frequency applying electrode 1 is formed in an irregular configuration, and the width of the projecting section 7 is varied in accordance with position in the electrode. For example, in the high frequency applying electrode 1 having such an irregular configuration, and the width of the projecting section is made wider in the center than that in the periphery, so that the film forming rate distribution is uniform. A holder 5 for a substrate constituted by SUS304 is installed in a substrate insertion chamber, and a substrate is then heated up to a predetermined temperature while the chamber is evacuated at pressure below 0.01Toor. Next, after the predetermined pressure and substrate temperature are obtained, the holder 5 for a substrate with a size of 300X230mm which holds a glass substrate with a size of 250X100mm is sent into a reaction chamber in which disilane is being discharged by carrying means. During the holder 5 for a substrate is made to pass through the reaction chamber, an amorphous silicon thin film is formed on the substrate. |
