发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To enable the lithography to be fined for expanding the formation space of the other circuits thereby improving the integration of the cell plate electrode structure by a method wherein the cell regions previously studded are putted in a line to increase the cell plate vacant regions. CONSTITUTION:A cell plate electrode 7 jointly owned by the cell capacitors 1, 2 of adjacent two memory cells is connected to cell capacitors 4, 5 on one diagonal line but disconnected to the other cell capacitors 3, 6 on the other diagonal line by the vacant regions 111, 112 of the cell plate electrode 7. However, the cell capacitors 3, 6 are connected to each other at any other pertinent positions to equalize the potentials thereof. Consequently, the vacant regions of the electrode 7 can be increased to facilitate the constitution of the other circuits simultaneously putting cell regions 81, 82 and 83, 84 in a line to facilitate the etching process while enabling the lithography to be fined.
申请公布号 JPH01173749(A) 申请公布日期 1989.07.10
申请号 JP19870334715 申请日期 1987.12.28
申请人 TOSHIBA CORP 发明人 SUGIURA SOICHI
分类号 G11C11/404;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108 主分类号 G11C11/404
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