发明名称 PHOTOELECTRON REPLICATION EXPOSURE AND MASK USED THEREFOR
摘要 <p>PURPOSE:To endure strong photoelectrons against stable use of long period of time and to reproduce them by exposing a photoelectron radiating material with a mask made of Pt, Pt content or Pt compound. CONSTITUTION:A metal pattern 12 is formed on a transparent substrate 11 of a mask 10, a Pt film 13 having 10-300Angstrom of thickness is formed thereon, a photoelectron radiating section and an exposure region patterned with nonphotoelectron radiating section are used as a real exposure pattern, and a pattern to be aligned at an element to be exposed with a plurality of masks disposed at its periphery is used as an alignment pattern. When the region of the combination of the patterns is used as an exposure unit, the mask to be used for exposure is preferably formed of one set or more of exposure region units, and an exciting light for radiating electrons from the masks has desirably a wavelength of 220-300nm. In order to align them, the photoelectron exciting light to be radiated to the alignment mark is preferably of second harmonic waves of an Ar laser. As a result, strong photoelectrons are stably durable against the use of long period of time and can be reproduced.</p>
申请公布号 JPH01158731(A) 申请公布日期 1989.06.21
申请号 JP19870316901 申请日期 1987.12.15
申请人 FUJITSU LTD 发明人 SAKAMOTO JUICHI;YASUDA HIROSHI;YAMADA AKIO;KUDO JINKO
分类号 G03F1/00;G03F7/20;H01J1/34;H01J37/317;H01L21/027 主分类号 G03F1/00
代理机构 代理人
主权项
地址