| 发明名称 |
A method of trench isolation. |
| 摘要 |
<p>A method of trench isolation comprising the steps of forming an ion implanted layer (4) in a region of a semi-conductor substrate (1) and providing a trench (5) in the ion implanted layer.</p> |
| 申请公布号 |
EP0316165(A2) |
申请公布日期 |
1989.05.17 |
| 申请号 |
EP19880310576 |
申请日期 |
1988.11.10 |
| 申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
HOSAKAO, TAKASHI |
| 分类号 |
H01L21/302;H01L21/306;H01L21/762;H01L21/763 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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