发明名称 |
GEDAEMPFTES CHEMISCHES DAMPFNIEDERSCHLAGSVERFAHREN GLATTER DOTIERTER FILME. |
摘要 |
A method of fabricating a film of in-situ doped polycrystalline silicon having a surface that is free of microscopic hillocks includes the steps of providing a deposition chamber and a wafer therein on which the film is to be fabricated and introducing one gas containing silicon atoms and another gas containing dopant atoms into said chamber with respective flow rates; wherein the respective flow rates are gradually increased in an overdamped fashion over a start-up time interval of at least one minute from zero to respective steady state values while simultaneously the ratio of the respective flow rates is kept within 25% of the ratio of said steady state values. |
申请公布号 |
AT42429(T) |
申请公布日期 |
1989.05.15 |
申请号 |
AT19840900354T |
申请日期 |
1983.12.14 |
申请人 |
UNISYS CORPORATION |
发明人 |
WONSOWICZ, CASIMIR, JOHN |
分类号 |
D01F9/08;C23C16/24;C23C16/44;C23C16/52;H01L21/18;H01L21/205;H01L21/225;H01L21/3205;(IPC1-7):H01L21/18 |
主分类号 |
D01F9/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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