| 摘要 |
<p>PURPOSE:To increase the mechanical strength of a hot junction part, and miniaturize a thermocouple pattern, by arranging a cool junction part of each thermocouple on an insulating thin film formed on a substrate as a heat sink, and arranging a hot junction part on a stand-type insulating part which is thick as compared with the insulating thin film formed on the substrate. CONSTITUTION:A stand-type insulating part 11 whose section is trapezoidal is formed at almost central part of an Si substrate 10. An insulating thin film 12 such as an Si oxide film and an Si nitride film whose thickness is less than or equal to 1mum is formed on the Si substrate 10 so as to cover the stand-type insulating part 11. A black body part 14 like gold black is formed on a central line of the stand type insulating part 11, and in its vicinity, a hot junction part 15c formed as a stacking part of thermocouple wires 15a, 15b is positioned. On the insulating thin film 12 except the stand-type insulating part 11, a cool junction part 15d formed as the overlap of thermocouple wires 15a, 15b is positioned. Therefore, each of the thermocouple wires 15a, 15b has steps 15e, 15f to climb up the stand-type insulating part 11, and the cool junction part 15d is positioned on the Si substrate 10 lower than the hot junction part 15c on the stand-type insulating part 11.</p> |
