| 摘要 |
PURPOSE:To obtain a groove-shaped capacitor of high breakdown strength by a method wherein a part other than an inner wall part inside a groove in a silicon substrate is oxidized selectively so as to form a second silicon oxide film and a silicon nitride film, while a first silicon oxide film and the second silicon oxide film are removed in order to easily form a rounded part at an edge part of an opening of the groove. CONSTITUTION:After a laminated film composed of a first silicon oxide film 6 and a silicon nitride film 7 has been formed on a silicon substrate 1 having a groove, the silicon film 7 and the silicon film 6 which have been formed in parts other than an inner wall part of the groove are removed selectively. The substrate 1 including the groove is oxidized, and a second silicon oxide film 8 is formed on the substrate 1 in parts other than the inner wall part of the groove. The silicon film 7 and the silicon films 6, 8 are removed. A dielectric film 9 to be used for a capacitor is formed on the substrate 1 including the inner wall part of the groove. A conductive layer 10 to be used as one electrode for the capacitor is formed on the dielectric film 9. By this setup, a rounded part at an edge part of an opening of the groove can be formed easily; the groove-shaped capacitor of high breakdown strength can thus be obtained. |
