| 摘要 |
PURPOSE:To reduce the area to be occupied by a load resistor and thereby to enhance device integration by a method wherein the load resistor is made of SiC. CONSTITUTION:An integrated circuit of this design is provided with a load resistor built of silicon carbide (SiC), with the beta-SiC, among others, equipped with a band gap energy Eg of 2.2eV, which is higher than that of the conventional resistor silicon which is 1.12eV. In this design, accordingly, a higher resistance may be attained with ease than in a design using polycrystalline silicon, which results in less change in resistance attributable to a rise in temperature. This design reduces the area to be occupied by a resistance body, enhancing device integration. |
