| 摘要 |
PURPOSE:To reduce parasitic resistance while a channel region is kept at high resistance by coating a source region and a drain region consisting of silicon thin-films, to which an impurity is added, and forming the channel region com posed of the silicon thin-film onto the whole surface. CONSTITUTION:A source region 102 and a drain region 103 made up of silicon thin-film to which an impurity as a donor or an acceptor is added, a channel region 104 consisting of a silicon thin-film coating the source region 102 and the drain region 103 and being shaped onto the whole surface, a gate insulating film 107 coating the source region 102, the drain region 103 and the channel region 104, and a gate electrode 108 being formed onto the gate insulating film 107 are shaped. Consequently, the impurity in the source-drain regions does not diffuse to the whole channel region, thus maintaining the high resis tance of the channel region. The impurity in the source-drain regions diffuses to the silicon thin film in the channel region near the source-drain regions, thus reducing resistance. |
