MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To uniformize the density of a film for forming an electrode and to contrive the improvement of reliability of the electrode by a method wherein deposition of an electrode metal is performed in an ultra-high vacuum. CONSTITUTION:A groove 3 is formed in a semiconductor substrate 16, an insulating film 4 is formed on the inner wall of the groove 3 and the surface of the substrate 16 and an electrode metal is deposited on the film 4 on the interior of the groove 3 and the surface of the substrate 16 in an ultra-high vacuum. A step which is generated between the metal deposited on the interior of the groove 3 and the metal deposited on the surface of the substrate 16 is flattened with a solution coating agent and the flattened film is removed by anisotropic etching. Thereby, the density of the film for forming a plate electrode in the interior of the groove is uniformized.