| 摘要 |
PURPOSE:To obtain a good high-frequency characteristic by a method wherein a film thickness of an interlayer insulating film is made to be thicker than that of a protective insulating film. CONSTITUTION:The following are formed in a field-effect transistor: a comb- shaped drain electrode 5, a source electrode 4 and a Schottky gate electrode 2 on the surface of an active layer of a wafer where the active layer has been formed on one main face of a semi-insulating substrate 1 corresponding to a device formation region; an interlayer insulating film 7 in a part where wiring layers 6b, 8 of individual electrodes cross three-dimensionally; a protective insulating film 3 which covers the surface of the active layer between the drain electrode 5 and the source electrode 4 including the surface of the gate electrode 2. In this field-effect transistor a film thickness of the interlayer insulating film 7 is made to be thicker than that of the protective insulating film 3. Accordingly, the sufficiently large dielectric breakdown strength is obtained; the stray capacitance between the gate electrode and the drain electrode and between the gate electrode and the source electrode is reduced. By this setup, it is possible to obtain a field-effect transistor whose high-frequency characteristic is good.
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