| 摘要 |
PURPOSE:To achieve an anisotropic shape without making structure of an etching device complex, by alternately repeating a process to form a sidewall protection film using pile film forming gas and an etching process of the material to be etched using reaction gas. CONSTITUTION:When pile film forming gas MMA to be decomposed by light is supplied to a substrate for sticking a pile film 6 to it followed by being irradiated with light, the MMA pile film 6 remains on a side wall 7 to become a sidewall protective film 8. Continuously, etching is performed by supplying reaction gas and irradiating UV light so that etching makes progress almost anisotropically. Next, in order to coat a gap of the sidewall protective film 8 produced by the undercut 9, light irradiation is interrupted to again supply MMA for afresh forming the sidewall protective film 8 in the same way for again supplying reaction gas to perform etching. Thereby, anisotropic etching is easily possible so as to make the structure of the device easy to control.
|
