| 摘要 |
PURPOSE:To stabilize the flow of a gas and obtain the uniformity of a surface and reproducibility, by applying magnetic field in a required direction at the time of epitaxial growth. CONSTITUTION:Magnetic field more than or equal to 1000 Gauss is applied to a quartz reaction furnace 4 in the flow direction of a material gas of organic metal compound, by a magnet 10 for impressing magnetic field. By the effect of this magnetic field, the flow of the material gas is stabilized, and a vapor growth having the uniformity of a surface and the reproducibility can be performed.
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