发明名称 PHOTORESIST COMPOSITION
摘要 PURPOSE:To improve the anti-oxygen plasma etching property of the titled composition by incorporating a specific siloxane polymer and a sensitive substance contg. >=3 numbers of 1,2-naphthoquinone diazido-4-sulfonyl ester group or 1,2-naphthoquinone diazido-5-sulfonyl ester group in one molecule, in the titled composition. CONSTITUTION:The titled composition contains the siloxane polymer shown by formula I or II and >=3 numbers of 1,2-naphthoquinone diazido-4-sulfonyl ester group or 1,2-naphthoquinone diazido-5-sulfonyl ester group in one molecule. In formulas I and II, Y is OH group, etc., R-R'' groups are the same or the different with each other,and are each one kind of the group selected from hydrogen atom, alkyl and phenyl groups, (l)-(n) are each or a positive integer. Thus, the durability of the titled composition against dry-etching using an oxygen plasma is improved.
申请公布号 JPS63220241(A) 申请公布日期 1988.09.13
申请号 JP19870054633 申请日期 1987.03.10
申请人 FUJI PHOTO FILM CO LTD 发明人 KOKUBO TADAYOSHI
分类号 G03C1/72;G03F7/075 主分类号 G03C1/72
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