Grown side-wall silicided source/drain self-align CMOS fabrication process

摘要

A process for forming CMOS devices uses outdiffusion of implanted ions in a patterned refractory silicidable layer to form the source/drain regions of the device. Moreover, the oxidation of the sidewalls of openings formed in the layer serves to isolate the layer from the polysilicon gate electrode which is later formed in the openings in this layer.