| 摘要 |
PURPOSE:To permit working of a core layer with high dimensional accuracy by forming a photoresist layer on a carbon film formed atop an upper core layer and patterning the carbon film to a prescribed shape with the photoresist layer as a mask, then etching the layer with the carbon film as a mask. CONSTITUTION:The carbon film 9 is formed to a nearly uniform thickness by sputtering, etc., on the upper core layer 7. The photoresist layer 10 is then thinly formed on the carbon film 9 in succession thereto and is patterned to the prescribed shape by exposing and developing. The carbon film 9 is patterned to the prescribed shape by reactive sputter etching or reactive ion beam etching with the patterned photoresist layer as a mask. The upper core layer 7 is worked to the prescribed shape by etching with the carbon film 9 as a mask. The thin mask is thus formed and the working of the upper core layer with high accuracy is permitted. |
