| 摘要 |
PURPOSE:To obtain a capacitive element having high reliability and the excellent holding characteristics of stored electrons by using the hetero-structure of AlGaAs and InGaAs. CONSTITUTION:A P-type GaAs layer 2 in thickness such as 1mum, a P-type IN0.2Ga0.8As layer 3 in thickness such as 130Angstrom , and an I-type Al0.43 Ga0.57As layer 4 in thickness such as 1000Angstrom are grown onto a P<+> type GaAs substrate 1 in succession, and an Al electrode 5 and an AnZn ohmic electrode 6 are formed as electrodes. Consequently, fifteen sec is acquired as the time constant (r) of the holding time of an Al0.43Ga0.57As/In0.2Ga0.8As group. Fifteen sec is larger than seventy millisecond of an Al0.43Ga0.57As/GaAs group and two millisecond of an AlAs/GaAs group, and is a value capable of sufficiently meeting application requirements of a dynamic RAM, etc. |
