| 摘要 |
PURPOSE:To form a transistor and an integrated circuit which are operated at a high speed and whose integration density is high by a method wherein the impurity concentration of a third region is higher than that of a fourth region and a junction position for the third region and a second region is situated at a part which is nearer to the surface than the junction position of the fourth region and the second region. CONSTITUTION:An insulating film 77 is formed at the side part of a protrusion-type monocrystalline semiconductor layer 3; a polycrystalline semiconductor layer 6 is connected to the corner part near the surface of the recessed-type single-crystalline semiconductor layer 3 in such a way that the width at the connected part is definite to be less than 0.1mum; the polycrystalline semiconductor layer near the connecting part is made thin. With this structure, the diffusion from the polycrystalline semiconductor layer 6 preliminarily doped with an impurity can be suppressed, and the distance of a P<+> type region 14 from an n<+> type buried layer 2 is made longer than that from a p<-> type region 4. Accordingly, the space between a third high-concentration region, of a first conductivity type, connected to a second single-crystalline or polycrystalline semiconductor layer and a buried layer, of a second conductivity type, can be made wider than the space between a fourth low-concentration region, of the first conductivity type, and a first region; as a result, it is possible to reduce the capacitance between a base and a collector for a bipolar transistor and to realize a high-speed transistor.
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