| 发明名称 |
Method of making SOI recrystallized layers by short spatially uniform light pulses |
| 摘要 |
Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.
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| 申请公布号 |
US4751193(A) |
申请公布日期 |
1988.06.14 |
| 申请号 |
US19860916817 |
申请日期 |
1986.10.09 |
| 申请人 |
Q-DOT, INC. |
发明人 |
MYRICK, JAMES J. |
| 分类号 |
G02B6/122;H01L21/20;H01L21/762;H01L23/482;(IPC1-7):H01L21/265;H01L21/208 |
主分类号 |
G02B6/122 |
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