| 摘要 |
PURPOSE:To make ohmic contact possible between a lower layer metal wiring and an upper part metal wiring, reduce remarkably the contact resistance and improve adhesive property of the upper part metal wiring, by cleaning the inside and the surface of a contact hole formed on a polyimide system interlayer insulating film applying an organic or inorganic alkali liquid. CONSTITUTION:On a substrate 10, a lower layer metal wiring pattern 11 is formed, and thereon an interlayer insulating film 12 of organic polyimide or photosensitive polyimide is formed. Then a contact hole 13 is formed by etching or developing. On the side surface of the contact hole 13 and on the wiring pattern 11, the following are chemically formed on an Al surface: the film of residue product of polyimide precursor, H2O produced by condensation reaction of polyimide, and a natural oxide film. A device 2 is fixed to a jig 1 and dipped in a heated organic alkali liquid. Thus the residue product and oxide of amphoteric metal on the surface of the contact hole 13 can be eluted and exfoliated. Then an upper part metal wiring 14 composed of Al is vapor- deposited.
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