| 摘要 |
PURPOSE:To obtain high photoelectric conductivity characteristics by forming a photoelectric conductive layer composed of an electric charge retaining layer constituted at least in a part by alternately laminating multicrystalline silicon thin films different in crystallization degree and amorphous silicon thin films containing at least one of C, O, and N, and a charge generating layer constituted at least in a part by alternately laminating multicrystalline silicon thin films different in crystallization degree from each other. CONSTITUTION:A barrier layer 2 is formed on an electric conductive substrate 1 and on this layer the photoelectric conductive layer composed of the charge retaining layer 5 and the charge generating layer 6. At least a part of the layer 5 is constituted by alternately laminating the multicrystalline silicon thin films different in crystallization degree and the amorphous silicon thin films containing at least one of C, O, and N, and at least a part of the charge generating layer 6 is constituted at least in a part by alternately laminating the multicrystalline silicon thin films different in crystallization degree from each other, and each of the thin films has the film thickness of 3-20nm, thus permitting high photoelectric conductivity characteristics and images higher in sharpness than those formed by the conventional photosensitive body to be obtained. |
