| 摘要 |
PURPOSE:To attain uniform characteristics and improve reliability, in a long length readout element formed by sequentially stacking a plurality of lower electrodes arranged previously, a photoelectric converting layer and a light transmitting upper electrode on a substrate, by providing an insulating layer having an opening window for specifying sensor area and covering the periphery of such opening window between the lower electrode and photoelectric converting layer. CONSTITUTION:The n-many lower electrodes LS1, LS2,..., LSn arranged in a line at specified intervals, a silicon nitride film 4 selectively formed on such lower electrodes, a belt shaped amorphous silicon hydride layer 2 and a light transmitting upper electrode 3 are sequentially stacked. The silicon nitride film 4 on the light signal extracting portions LS1, LS2, LS3,..., LSn among the lower electrodes SE1, SE2, SE3,..., SEn are removed and windows which become the sensor areas are then formed. ITO is then stacked covering the amorphous silicon hydride layer 2 on the light signal extracting portions LS1, LS2, LS3,..., LSn to form the ITS upper electrode 3. |
