发明名称 VAPOR GROWTH APPARATUS
摘要 PURPOSE:To contrive uniform heating temperature of the central part of an equalizing plate and outer edge part, by providing the equalizing plate for uniformly transmitting heat of a heater for heating wafers and then correction plates for regulating the heat emissivity in the central part of the equalizing plate and the outer edge part. CONSTITUTION:A gas blow-off plate 6 is provided in a wafer treating chamber for vapor growth of wafers and a tray 4 is horizontally and movably provided just above the gas blow-off plate 6. A heater 1 having an equalizing plate 2 is further provided above the tray 4. Furthermore, correction plates (3a) and (3b) for reflecting heat and regulating the heat reflectance of the equalizing plate 2 are additionally provided on the undersurface of the equalizing plate 2, i.e. surface facing the tray 4. The area of the correction plate (3a) additionally provided in the central part (2a) of the equalizing plate 2 is set at a larger value than that of the correction plates (3b) additionally provided in the outer edge part (2b). Thereby the heat emissivity in the central part (2a) of the equalizing plate is is reduced to a low value and the heat emissivity in the outer edge part (2b) is increased to make the temperature distribution of the equalizing plate 2 uniform.
申请公布号 JPS63112495(A) 申请公布日期 1988.05.17
申请号 JP19860257927 申请日期 1986.10.29
申请人 NEC KYUSHU LTD 发明人 OSAKI MINORU
分类号 C30B25/10;H01L21/205 主分类号 C30B25/10
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