| 摘要 |
PURPOSE:To contrive to be able to manufacture a Bi-CMOS transistor, wherein the characteristics of the bipolar transistor are also improved, using a P-type Si substrate by a method wherein an N-type collector region is formed in the substrate wherein a CMOS transistor is formed, an epitaxial layer which is used as a base region is formed on the surface thereof and a gate electrode and a base lead-out electrode are formed simultaneously with the formation of the epitaxial layer. CONSTITUTION:An N-type well 3 for a P-channel CMOS transistor and an N-type collector region 2 for an NPN bipolar transistor are formed in a P-type Si substrate 1 and a base region is formed an Si epitaxial layer 6A on a part of the substrate surface, wherein the collector region 2 is exposed. A base electrode lead-out part 12 connected with the epitaxial layer 6A and respective base electrode 7 and 8 for the CMOS transistor are formed on an insulating layer simultaneously with the formation of this epitaxial layer 6A. Moreover, source and drain regions 11 and 13 are formed using these base electrodes 7 and 8 as masks and furthermore, an emitter region 17 is formed in the above epitaxial layer 6A and the bipolar transistor and the CMOS transistor are formed. |
