| 摘要 |
In a semi-custom integrated circuit, e.g. a bipolar analogue array, underpass areas are so configured as to permit operation as capacitors by suitable configuration of a user determined interconnection pattern. Typically each underpass comprises a highly doped region 15 disposed over a buried layer 14. A thin oxide layer is applied to the surface of the underpass. Suitable configuration of polysilicon and metal masks provides a cross-over or a capacitor. |
