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发明名称
HIGH QUALITY SINGLE CRYSTAL AND GROWING METHOD THE SAME
摘要
申请公布号
KR20060034425(A)
申请公布日期
2006.04.24
申请号
KR20040083447
申请日期
2004.10.19
申请人
SILTRON INC.
发明人
CHO, HYON JONG
分类号
C30B15/00;C30B15/14;C30B15/22
主分类号
C30B15/00
代理机构
代理人
主权项
地址
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