| 摘要 |
PURPOSE:To detect infrared rays without generating a crosstalk by forming an HgCdTe region in predetermined thickness between a CdTe substrate and an HgCdTe crystal as an infrared absorption layer. CONSTITUTION:Hg1-xCdxTe (where x=0.15) in prescribed thickness is shaped between a CdTe substrate 1 and a P-HgTe crystal 2 having epitaxial growth in specified thickness as an infrared absorption layer 4. The layer 4 is formed at a position corresponding to the required space of a picture element 3-1 and a picture element 3-2. Accordingly, since the carrier diffusion length of the P-HgCdTe crystal 2 receiving infrared beams is made smaller than the space of the picture elements, carriers by infrared beams projected from sections except the infrared absorption layer 4 do not reach to adjacent picture elements and are recombined, thus generating no crosstalk. |
