| 摘要 |
PURPOSE:To form a uniform film on a substrate having a large area by a method wherein the high frequency power, to be applied between electrodes when a plasma vapor-phase reaction is performed, is applied after it has been AM-modulated. CONSTITUTION:The high frequency power, to be applied between the upper and the lower paralleled flat plate electrodes 21 and 21, is amplitudemodulated, its frequency is once in 1-5 seconds, the maximum degree of modulation is 50%, and when the degree of modulation is made larger than the above, the discharge of plasma is not uniform and it becomes instable, because the interval between the upper and the lower electrodes 21 and 21 is spaced widely. Thus, when the high frequency power to be applied is AM-modulated and it is applied between the upper and the lower electrodes 21 and 21, the film-forming condition on a substrate 25 is brought into the state of regions I, II and III alternately as shown in the diagram, and the film thickness distribution on the substrate 25 can be brought into the uniform film thickness distribution as a result. Through these procedures, the film having a uniform film thickness distribution can be formed on the substrate of a large area. |
