发明名称 Sputtering apparatus with film forming directivity
摘要 A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles. Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma. The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.
申请公布号 US4724060(A) 申请公布日期 1988.02.09
申请号 US19850797966 申请日期 1985.11.14
申请人 HITACHI, LTD. 发明人 SAKATA, MASAO;SHIMAMURA, HIDEAKI;KOBAYASHI, SHIGERU;KAWAHITO, TSUNEYOSHI;KAMEI, TSUNEAKI;ABE, KATSUO
分类号 C23C14/34;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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