发明名称 |
Sputtering apparatus with film forming directivity |
摘要 |
A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles. Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma. The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.
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申请公布号 |
US4724060(A) |
申请公布日期 |
1988.02.09 |
申请号 |
US19850797966 |
申请日期 |
1985.11.14 |
申请人 |
HITACHI, LTD. |
发明人 |
SAKATA, MASAO;SHIMAMURA, HIDEAKI;KOBAYASHI, SHIGERU;KAWAHITO, TSUNEYOSHI;KAMEI, TSUNEAKI;ABE, KATSUO |
分类号 |
C23C14/34;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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