| 发明名称 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p>A semiconductor device and a method of manufacturing the same are disclosed wherein a semi-insulating film having a high trap density is formed on a semiconductor substrate so as to prevent charges from remaining in the semi-insulating film and to prevent a change in carrier density at the substrate surface upon irradiation thereof with radiation. The lifetime of minority carriers can be easily controlled without decreasing the junction breakdown voltages.</p> |
| 申请公布号 |
EP0137319(B1) |
申请公布日期 |
1988.01.07 |
| 申请号 |
EP19840110682 |
申请日期 |
1984.09.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIRAKI, SHUN-ICH C/O PATENT DIVISION;TSURU, KAZUO C/O PATENT DIVISION;USUKI, YOSHIKAZU C/O PATENT DIVISION;KOSHINO, YUTAKA C/O PATENT DIVISION |
| 分类号 |
H01L21/322;H01L21/263;H01L21/314;H01L21/324;H01L29/84;(IPC1-7):H01L21/263 |
主分类号 |
H01L21/322 |
| 代理机构 |
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