发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To ensure the setting of a FF by applying a power source voltage to one of a couple of loads at the time of recalling in prescribed timing to simplify the circuit constitution. CONSTITUTION:Based on a recall signal RC, a positive power source voltage VC2 is decreased once at suitable timing and then rises again. When a transistor (TR) Q6 is turned off, a voltage VC1 is brought to 0, then the node N1 goes to 0 and a TR Q4 is turned off. When the TRs Q6, Q4 are turned off, the node N2 goes to 'H'. When the VC1 is raised to 'H', the state of FF comprising TRs Q1-Q4 is unchanged. On the other hand, with the TR Q6 turned on, when the voltage VC1 is brought to 0, the TR Q4 is turned off, the level of the N2 goes to slightly positive potential by turning on the TR Q6. In this case, when the voltage VC1 is raised, only the potential of the N1 rises, and the N1 goes to 'H' and the node N2 goes to '0'.
申请公布号 JPS62293594(A) 申请公布日期 1987.12.21
申请号 JP19860136196 申请日期 1986.06.13
申请人 FUJITSU LTD 发明人 ARAKAWA HIDEKI
分类号 G11C14/00;G11C11/40 主分类号 G11C14/00
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