| 摘要 |
PURPOSE:To improve lattice mismatching with a substrate crystal, and to obtain light-receiving and light-emitting elements having high performance by forming an active layer consisting of an InAs1-xSbx crystal layer (0<=x<=1) onto a Cd1-yZnyTe crystal substrate (0<=y<=1). CONSTITUTION:When selecting the mixed crystal ratio (x) of InAs1-xSbx, InAs1-xSbx is used as a material available as an infrared detecting element having a band gap smaller than InSb and a wavelength band of 8-14mum. When Cd1-yZnyTe is employed as the epitaxial growth substrate of the crystal layer, lattice mismatching between the crystal layer and the substrate can be brought to 1% or less by selecting a mixed crystal ratio (y), the InAs1-xSbx layer having no crystal defect resulting from lattice mismatching is acquired, infrared beams and not absorbed by the substrate even when infrared beams are projected from the substrate side, and the amount of light sufficiently reaches the InAs1-xSbx active layer, thus obtaining the infrared detecting element having high sensitivity, then also acquiring the element having excellent characteristics as a light-emitting element. The lattice mismatching of an element in which InAs1-xSbx such as Znadded p-type InAs0.4Sb0.6 12 and InAs1-xSbx such as Se-added n-type InAs0.4 Sb0.6 13 are superposed onto the substrate such as p-type Cd0.55Zn0.45Te substrate 11 extends over 1% or less, and the element has superior infrared detection characteristics. |
