| 摘要 |
PURPOSE:To easily form a submicron fine pattern and its vicinities with good precision by developing a photoresist layer after a secondary exposure and selectively removing the photoresist layer except the primary exposure region and that underlying unexposed region. CONSTITUTION:Only the upper layer part of the photoresist layer 2 formed on the substrate 1 to be processed containing a photochromic material is exposed to ultraviolet rays 4 through a photomask 3 having a mask pattern 5 by the primary exposure to develop the color of the photochromic material and form a color developed resist pattern 6, next, the primarily exposed region is cross-linked and solidified by heat treatment, and the whole areas of the resist layer are subjected to the secondary uniform exposure to ultraviolet rays 4 by using said resist pattern 6 as a color developed resist mask pattern 106 to expose the resist layer 2 except the mask pattern 106 and the regions under it to form the exposed regions 2A and the unexposed regions 2B, and the regions 2A are removed selectively, thus permitting the diffusion width of the rays past the mask to be reduced, the resolution of the resist layer 2 to be enhanced, and a finer pattern to be transferred. |
