发明名称 FORMATION OF OPTICAL MEMORY DEVICE USING LIQUID CRYSTAL
摘要 PURPOSE:To enable an electrical or an optical rewriting, and enable an optical non-destructive reading by mounting the 1st and the 2nd dielectric thin films on the inner side of at least one or the both of electrodes. CONSTITUTION:The floating charge trapping center layer (FTL) 5 is interposed between the electrodes of the liquid crystal device which is formed facing the inner surfaces of a pair of th e electrodes 4, 4'. The 1st dielectric film 5-1 is formed on one or both of the electrodes, followed by forming the charge trapping center layer (TL) 5-2 on the 1st conductor film. The another 2nd dielectric film 5-3 is formed on the TL 5-2 so as to cover the TL 5-2, thereby forming the TL 5-2 or the FTL 5, electrically floating from the electrodes 4, 4' and the liquid crystal 6. And, the FTL 5 and the filled liquid crystal 6 are isolate by the dielectric film 5-3 so as not to directly contact with each other. The FTL 5 has a nonvolatile memory action in an ordinary use state (a state of readout of an information).
申请公布号 JPS62222221(A) 申请公布日期 1987.09.30
申请号 JP19860065514 申请日期 1986.03.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 G02F1/133;G02F1/13;G02F1/1343;G02F1/137;G02F1/141;G11B7/26 主分类号 G02F1/133
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