| 摘要 |
PURPOSE:To obtain a laser device possessing optimum front surface reflectivities adapted for recording and reproducing respectively, by making the front surface reflectivity of a laser device for recording low value and making that of a laser device for reproducing high value. CONSTITUTION:A multilayer structure is grown on a p-GaAs substrate 1. The perpendicularity of an end surface can be controlled by the AlAs mixed crystal ratio of p, n-GaAlAs clad layers 3 and 5 and the AlAs mixed crystal ratio of GaAlAs layer 11. The end surface is coated with Al2O3 9 and Si 10. Thereby, the reflectivity of the end surface is increased. As to the front surface, only Si is eliminated by selective etching, and the reflectivity index is decreased. An uppermost layer 11 is eliminated, an AuGeNi electrode 8 is deposited, and the laser for recording and the laser for reproducing are electrically separated. Then an AuZn electrode 7 is deposited on a substrate. The laser for recording can supply a high output, and the laser for reproducing exhibits low noise characteristics.
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