Heterojunction semiconductor device.

摘要

Heterojunction device consists of a unipolar transistor comprising: collector layer (3); base layer (5); collector side barrier layer (4) between collector and base layers; emitter layer (8); and an emitter side barrier layer (7) between base and emitter layers having a thickness for tunneling a carrier injected into the base layer. The base layer has a superlattice of thin barrier layers and thin well layers for forming a mini-band through which the injected carrier can move and a mini-band gap with which the injected carrier collides.