发明名称 THIN FILM PLATINUM RESISTANCE THERMOMETER WITH HIGH TEMPERATURE DIFFUSION BARRIER
摘要 <p>A thin film platinum resistance thermometer capable of operation at elevated temperatures includes a benign dielectric layer (24) covering the thin film platinum resistance temperature sensing element (14) and a barrier layer (26) overlying the dielectric layer (24). The barrier layer (26), which is preferably titanium dioxide, resists diffusion or contaminants which would alter the electrical characteristics of the sensing element (14), while permitting diffusion of oxygen through the barrier layer (26).</p>
申请公布号 WO1987005146(A1) 申请公布日期 1987.08.27
申请号 US1987000252 申请日期 1987.02.06
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