| 摘要 |
PURPOSE:To improve the controllability of radiation intensity by providing a plurality of approximate heating walls coaxial with molecular beam source cell in the cell so that the molecular beam emitted from a molecular beam source may not be directly emitted to a sample to emit a strong molecular beam. CONSTITUTION:A heating wall 3C is in a closed tube shape in the manner the same as a heating outer wall 3W, and heating walls 3A, 3B are opened at the bottoms in a cavity shape. These walls are all formed of a sintered boron nitride material in which a heater 31 is buried. A molecular beam emitted from a molecular beams source L contained in a molecular beam source cell 30 is not contacted directly with a substrate 3 to be grown, but contacted once or twice with the walls 3A-3C, while redeposited, reemitted molecular beam is fed to the substrate 2 to be epitaxially grown. Thus, when heaters provided in the walls 3A-3C are further individually controlled to be heated separately from the wall 3W, the intensity of the molecular beam which arrives at the substrate 2 can be controlled to enhance its controllability.
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