发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent the malfunction of a sense amplifier caused by noise on a power source line, to which the action of an output buffer produces by permitting a sense amplifier output change inhibiting circuit to inhibit an output signal from changing while its output is changing after an output change detection circuit receives the output signal, and to hold a previous output signal. CONSTITUTION:A bit line BL and its inverse BL connected to a memory cell are amplified by a sense amplifier 1, and input to the sense amplifier change inhibiting circuit 4. Their outputs are transmitted to an output buffer 2. The output change detection circuit 3 receives the output signals D0-D3 in the output buffer 2. If any one of them changes, the circuit 3 outputs an output signal change detection pulse CL synchronizing with a period when the outputted waveform from the output buffer 2 changes to the circuit 4 through delay circuits 11, 21, 31 and 41. While the output is changing, the circuit 4 inhibits its output signal from changing, holds the previous output signal, supplies it to the output buffer 2, and outputs it from an OUTPUT terminal.
申请公布号 JPS62177790(A) 申请公布日期 1987.08.04
申请号 JP19860018672 申请日期 1986.01.30
申请人 SEIKO EPSON CORP 发明人 KUMAGAI TAKASHI
分类号 G11C11/419;G11C11/34;G11C11/407;G11C11/409;G11C11/413 主分类号 G11C11/419
代理机构 代理人
主权项
地址