| 摘要 |
PURPOSE:To obtain an insulating region of high quality by film growth by forming a collector region by ion implanting to an insulating film by the film growth. CONSTITUTION:An N-type high impurity-doped GaAs collector contact region 50 and a non-doped GaAs insulating region 51 are formed by film growth on a semi-insulating GaAs substrate 49, and a collector region 52 is formed by Si ion implanting at the part of the region 51, and heat treated. Then, a GaAs base region 53, an AlGaAs emitter region 54 and a GaAs emitter contact region 55 are formed by film growth. Thereafter, the regions 55, 54 are so mesa etched rectangularly to cross perpendicularly to the region 52, and the regions 53, 51, 52 are then mesa etched. Then, a protecting film 26, an emitter electrode 9, a collector electrode 7 and a base electrode 8 are formed.
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